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| Amplifier, Power, 1W 3.5-6.5 GHz Features 1 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAGTM Process MAAPGM0029-DIE 903240 -- Preliminary Information Description The MAAPGM0029-DIE is a 2-stage 1 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Wireless Local Loop 3.7- 4.2 GHz SatCom Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 8V, VGG = -2V, Pin = 16 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 2 Harmonic 3 Harmonic 1. TB = MMIC Base Temperature 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. rd nd Symbol f POUT PAE P1dB G VSWR IGG IDD OTOI NF 2f 3f Typical 3.5-6.5 31 40 30 20 1.5:1 <4 < 400 42 7 -15 -25 Units GHz dBm % dBm dB mA mA dBm dB dBc dBc * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz Maximum Operating Conditions 2 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS Tj TSTG Absolute Maximum 21.0 +12.0 -3.0 470 3.1 180 -55 to +150 MAAPGM0029-DIE 903240 -- Preliminary Information Units dBm V V mA W C C 2. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Drain Voltage Gate Voltage Input Power Junction Temperature MMIC Base Temperature Symbol VDD VGG PIN Tj TB Min 4.0 -2.3 Typ 8.0 -2.0 16.0 Max 10.0 -1.5 19.0 150 Note 2 Unit V V dBm C C 2. Maximum MMIC Base Temperature = 150C-- 25.5 C/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (approximately @ -2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 2 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz 50 MAAPGM0029-DIE 903240 -- Preliminary Information 50 POUT PAE 40 50 50 POUT PAE 40 40 40 30 30 30 30 20 20 20 20 10 10 10 10 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 0 4 5 6 7 8 9 10 0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 16dBm. Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 5 GHz. 50 VDD = 4 VDD = 8 40 VDD = 6 VDD = 10 30 GAIN VSWR 25 6 5 30 20 4 20 15 3 10 10 2 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 5 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 1 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage Frequency (GHz) Figure 4. Small Signal Gain and Input VSWR vs. Frequency at VDD = 8V. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz Mechanical Information Chip Size: 2.980 x 1.980 x 0.075 mm (117x 78 x 3 mils) MAAPGM0029-DIE 903240 -- Preliminary Information 0.127 mm. 1.980 mm. 1.828 mm. 0.990 mm. IN 1.490 mm. VDD OUT VGG 2.980 mm. 0.990 mm. 0.152 mm. 0 0 Figure 5. Die Layout Chip edge to bond pad dimensions are shown to the center of the bond pad. 1.490 mm. 2.853 mm. Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 150 150 x 150 Size (mils) 4x8 8x6 6x6 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 4 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1W 3.5-6.5 GHz Assembly and Bonding Diagram MAAPGM0029-DIE 903240 -- Preliminary Information VDD 0.1 F 100 pF VDD RFIN OUT IN RFOUT 100 pF VGG VGG 0.1 F Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW test- Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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